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M25P20
2 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface
Feature summary

2 Mbit of Flash Memory Page Program (up to 256 Bytes) in 1.4ms (typical) Sector Erase (512 Kbit) in 1s (typical) Bulk Erase (2 Mbit) in 3s (typical) 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate (maximum) Deep Power-down Mode 1A (typical) Electronic Signatures - JEDEC Standard two-Byte Signature (2012h) - RES Instruction, One-Byte, Signature (11h), for backward compatibility Packages - ECOPACK(R) (RoHS compliant) SO8 (MN) 150 mil width
VFQFPN8 (MP) (MLP8)
December 2007
Rev 11
1/50
www.numonyx.com 1
Contents
M25P20
Contents
1 2 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1 2.2 2.3 2.4 2.5 2.6 Serial Data Output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Serial Data Input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Serial Clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Hold (HOLD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Write Protect (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 4
SPI modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1 4.2 4.3 4.4 4.5 4.6 4.7 Page Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Sector Erase and Bulk Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Polling During a Write, Program or Erase Cycle . . . . . . . . . . . . . . . . . . . 11 Active Power, Standby Power and Deep Power-Down Modes . . . . . . . . . 11 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Hold Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5 6
Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6.1 6.2 6.3 6.4 Write Enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Read Identification (RDID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Read Status Register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.4.1 6.4.2 6.4.3 6.4.4 WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 SRWD bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6.5
2/50
Write Status Register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
M25P20
Contents
6.6 6.7 6.8 6.9 6.10 6.11 6.12
Read Data Bytes (READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Read Data Bytes at Higher Speed (FAST_READ) . . . . . . . . . . . . . . . . . . 25 Page Program (PP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Sector Erase (SE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Bulk Erase (BE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Deep Power-down (DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Release from Deep Power-down and Read Electronic Signature (RES) . 31
7 8 9 10 11 12 13
Power-up and Power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
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List of tables
M25P20
List of tables
Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Protected Area Sizes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Memory Organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Instruction Set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Read Identification (RDID) Data-Out Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Status Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Power-Up Timing and VWI Threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Data Retention and Endurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 DC Characteristics (Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 DC Characteristics (Device Grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Instruction Times (Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Instruction Times (Device Grade 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 AC Characteristics (25MHz Operation, Device Grade 6 or 3) . . . . . . . . . . . . . . . . . . . . . . 40 AC Characteristics (40MHz Operation, Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . 41 AC Characteristics (50MHz Operation, Device Grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . 42 SO8 narrow - 8 lead Plastic Small Outline, 150 mils body width, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 VFQFPN8 (MLP8) 8-lead Very thin Fine Pitch Quad Flat Package No lead, 6x5mm, Package Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
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M25P20
List of figures
List of figures
Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Logic Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 SO and VFQFPN Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Bus Master and memory devices on the SPI Bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Hold Condition Activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Write Enable (WREN) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Write Disable (WRDI) Instruction Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Read Identification (RDID) Instruction Sequence and Data-Out Sequence . . . . . . . . . . . . 19 Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence . . . . . . . . . 21 Write Status Register (WRSR) Instruction Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Read Data Bytes (READ) instruction sequence and data-out sequence . . . . . . . . . . . . . . 24 Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence and Data-Out Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Page Program (PP) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Sector Erase (SE) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Bulk Erase (BE) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Deep Power-down (DP) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Release from Deep Power-down and Read Electronic Signature (RES) Instruction Sequence and Data-Out Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Release from Deep Power-down (RES) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . 32 Power-up Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 AC Measurement I/O Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Serial Input Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Write Protect Setup and Hold Timing during WRSR when SRWD=1. . . . . . . . . . . . . . . . . 43 Hold Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 SO8 narrow - 8 lead Plastic Small Outline, 150 mils body width, Package Outline . . . . . . 45 VFQFPN8 (MLP8) 8-lead Very thin Fine Pitch Quad Flat Package No lead, 6x5mm, Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
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Summary description
M25P20
1
Summary description
The M25P20 is a 2 Mbit (256K x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 1024 pages, or 262,144 bytes. The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction. In order to meet environmental requirements, Numonyx offers these devices in ECOPACK(R) packages. ECOPACK(R) packages are Lead-free and RoHS compliant. Figure 1. Logic Diagram
VCC
D C S W HOLD M25P20
Q
VSS
AI04080
Figure 2.
SO and VFQFPN Connections
M25P20 S Q W VSS 1 2 3 4 8 7 6 5
AI04081B
VCC HOLD C D
1. There is an exposed die paddle on the underside of the MLP8 package. This is pulled, internally, to VSS, and must not be allowed to be connected to any other voltage or signal line on the PCB. 2. See Package mechanical section for package dimensions, and how to identify pin-1.
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M25P20 Table 1.
C D Q S W HOLD VCC VSS
Summary description Signal Names
Serial Clock Serial Data Input Serial Data Output Chip Select Write Protect Hold Supply Voltage Ground
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Signal description
M25P20
2
2.1
Signal description
Serial Data Output (Q)
This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of Serial Clock (C).
2.2
Serial Data Input (D)
This input signal is used to transfer data serially into the device. It receives instructions, addresses, and the data to be programmed. Values are latched on the rising edge of Serial Clock (C).
2.3
Serial Clock (C)
This input signal provides the timing of the serial interface. Instructions, addresses, or data present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on Serial Data Output (Q) changes after the falling edge of Serial Clock (C).
2.4
Chip Select (S)
When this input signal is High, the device is deselected and Serial Data Output (Q) is at high impedance. Unless an internal Program, Erase or Write Status Register cycle is in progress, the device will be in the Standby mode (this is not the Deep Power-down mode). Driving Chip Select (S) Low selects the device, placing it in the Active Power mode. After Power-up, a falling edge on Chip Select (S) is required prior to the start of any instruction.
2.5
Hold (HOLD)
The Hold (HOLD) signal is used to pause any serial communications with the device without deselecting the device. During the Hold condition, the Serial Data Output (Q) is high impedance, and Serial Data Input (D) and Serial Clock (C) are Don't Care. To start the Hold condition, the device must be selected, with Chip Select (S) driven Low.
2.6
Write Protect (W)
The main purpose of this input signal is to freeze the size of the area of memory that is protected against program or erase instructions (as specified by the values in the BP1 and BP0 bits of the Status Register).
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M25P20
SPI modes
3
SPI modes
These devices can be driven by a microcontroller with its SPI peripheral running in either of the two following modes:

CPOL=0, CPHA=0 CPOL=1, CPHA=1
For these two modes, input data is latched in on the rising edge of Serial Clock (C), and output data is available from the falling edge of Serial Clock (C). The difference between the two modes, as shown in Figure 4, is the clock polarity when the bus master is in Stand-by mode and not transferring data:

C remains at 0 for (CPOL=0, CPHA=0) C remains at 1 for (CPOL=1, CPHA=1)
Figure 3.
Bus Master and memory devices on the SPI Bus
VSS VCC R(2) SDO
SPI Interface with (CPOL, CPHA) = (0, 0) or (1, 1)
SDI SCK CQD VCC VSS R(2) SPI Memory Device R(2) CQD VCC VSS SPI Memory R(2) Device SPI Memory Device CQD VCC VSS
SPI Bus Master
CS3
CS2
CS1 S W HOLD S W HOLD S W HOLD
AI12836
1. The Write Protect (W) and Hold (HOLD) signals should be driven, High or Low as appropriate. 2. These pull-up resistors, R, ensure that the memory devices are not selected if the Bus Master leaves the S line in the highimpedance state. As the Bus Master may enter a state where all inputs/outputs are in high impedance at the same time (e.g.: when the Bus Master is reset), the clock line (C) must be connected to an external pull-down resistor so that, when all inputs/outputs become high impedance, S is pulled High while C is pulled Low (thus ensuring that S and C do not become High at the same time, and so, that the tSHCH requirement is met).
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SPI modes Figure 4.
CPOL CPHA C
M25P20 SPI modes supported
0
0
1
1
C
D
MSB
Q
MSB
AI01438B
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M25P20
Operating features
4
4.1
Operating features
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the internal Program cycle (of duration tPP). To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the same page of memory. For optimized timings, it is recommended to use the Page Program (PP) instruction to program all consecutive targeted Bytes in a single sequence versus using several Page Program (PP) sequences with each containing only a few Bytes (see Page Program (PP), Instruction Times (Device Grade 6) and Table 16: Instruction Times (Device Grade 3)).
4.2
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be applied, the bytes of memory need to have been erased to all 1s (FFh). This can be achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of duration tSE or tBE). The Erase instruction must be preceded by a Write Enable (WREN) instruction.
4.3
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase (SE or BE) can be achieved by not waiting for the worst case delay (tW, tPP, tSE, or tBE). The Write In Progress (WIP) bit is provided in the Status Register so that the application program can monitor its value, polling it to establish when the previous Write cycle, Program cycle or Erase cycle is complete.
4.4
Active Power, Standby Power and Deep Power-Down Modes
When Chip Select (S) is Low, the device is selected, and in the Active Power mode. When Chip Select (S) is High, the device is deselected, but could remain in the Active Power mode until all internal cycles have completed (Program, Erase, Write Status Register). The device then goes in to the Standby Power mode. The device consumption drops to ICC1. The Deep Power-down mode is entered when the specific instruction (the Deep Powerdown (DP) instruction) is executed. The device consumption drops further to ICC2. The device remains in this mode until another specific instruction (the Release from Deep Power-down and Read Electronic Signature (RES) instruction) is executed. All other instructions are ignored while the device is in the Deep Power-down mode. This can be used as an extra software protection mechanism, when the device is not in active use, to protect the device from inadvertent Write, Program or Erase instructions.
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Operating features
M25P20
4.5
Status Register
The Status Register contains a number of status and control bits, as shown in Table 6, that can be read or set (as appropriate) by specific instructions. For a detailed description of the Status Register bits, see Section 6.4: Read Status Register (RDSR).
4.6
Protection Modes
The environments where non-volatile memory devices are used can be very noisy. No SPI device can operate correctly in the presence of excessive noise. To help combat this, the M25P20 features the following data protection mechanisms:

Power On Reset and an internal timer (tPUW) can provide protection against inadvertant changes while the power supply is outside the operating specification. Program, Erase and Write Status Register instructions are checked that they consist of a number of clock pulses that is a multiple of eight, before they are accepted for execution. All instructions that modify data must be preceded by a Write Enable (WREN) instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state by the following events: - - - - - - Power-up Write Disable (WRDI) instruction completion Write Status Register (WRSR) instruction completion Page Program (PP) instruction completion Sector Erase (SE) instruction completion Bulk Erase (BE) instruction completion

The Block Protect (BP1, BP0) bits allow part of the memory to be configured as readonly. This is the Software Protected Mode (SPM). The Write Protect (W) signal, in co-operation with the Status Register Write Disable (SRWD) bit, allows the Block Protect (BP1, BP0) bits and Status Register Write Disable (SRWD) bit to be write-protected. This is the Hardware Protected Mode (HPM). In addition to the low power consumption feature, the Deep Power-down mode offers extra software protection from inadvertant Write, Program and Erase instructions, as all instructions are ignored except one particular instruction (the Release from Deep Power-down instruction).
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M25P20 Table 2. Protected Area Sizes
Memory Content Protected Area none Upper quarter (Sector 3) Upper half (two sectors: 2 and 3)
Operating features
Status Register Content BP1 Bit BP0 Bit 0 0 1 1 0 1 0 1
Unprotected Area All sectors(1)(four sectors: 0, 1, 2 and 3) Lower three-quarters (three sectors: 0 to 2) Lower half (Sectors 0 and 1)
All sectors (four sectors: 0, 1, 2 and 3) none
1. The device is ready to accept a Bulk Erase instruction if, and only if, both Block Protect (BP1, BP0) are 0.
4.7
Hold Condition
The Hold (HOLD) signal is used to pause any serial communications with the device without resetting the clocking sequence. However, taking this signal Low does not terminate any Write Status Register, Program or Erase cycle that is currently in progress. To enter the Hold condition, the device must be selected, with Chip Select (S) Low. The Hold condition starts on the falling edge of the Hold (HOLD) signal, provided that this coincides with Serial Clock (C) being Low (as shown in Figure 5). The Hold condition ends on the rising edge of the Hold (HOLD) signal, provided that this coincides with Serial Clock (C) being Low. If the falling edge does not coincide with Serial Clock (C) being Low, the Hold condition starts after Serial Clock (C) next goes Low. Similarly, if the rising edge does not coincide with Serial Clock (C) being Low, the Hold condition ends after Serial Clock (C) next goes Low. (This is shown in Figure 5). During the Hold condition, the Serial Data Output (Q) is high impedance, and Serial Data Input (D) and Serial Clock (C) are Don't Care. Normally, the device is kept selected, with Chip Select (S) driven Low, for the whole duration of the Hold condition. This is to ensure that the state of the internal logic remains unchanged from the moment of entering the Hold condition. If Chip Select (S) goes High while the device is in the Hold condition, this has the effect of resetting the internal logic of the device. To restart communication with the device, it is necessary to drive Hold (HOLD) High, and then to drive Chip Select (S) Low. This prevents the device from going back to the Hold condition.
13/50
Operating features Figure 5. Hold Condition Activation
M25P20
C
HOLD
Hold Condition (standard use)
Hold Condition (non-standard use)
AI02029D
14/50
M25P20
Memory organization
5
Memory organization
The memory is organized as:

262,144 bytes (8 bits each) 4 sectors (512 Kbits, 65536 bytes each) 1024 pages (256 bytes each).
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable. Table 3. Memory Organization
Sector 3 2 1 0 30000h 20000h 10000h 00000h Address Range 3FFFFh 2FFFFh 1FFFFh 0FFFFh
Figure 6.
HOLD W S C D Q
Block Diagram
High Voltage Generator
Control Logic
I/O Shift Register
Address Register and Counter
256 Byte Data Buffer
Status Register
3FFFFh
30000h
Y Decoder
20000h
Size of the read-only memory area
10000h
00000h 256 Bytes (Page Size) X Decoder
000FFh
AI04079
15/50
Instructions
M25P20
6
Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select (S) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first, on Serial Data Input (D), each bit being latched on the rising edges of Serial Clock (C). The instruction set is listed in Table 4. Every instruction sequence starts with a one-byte instruction code. Depending on the instruction, this might be followed by address bytes, or by data bytes, or by both or none. Chip Select (S) must be driven High after the last bit of the instruction sequence has been shifted in. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read), Read Identification (RDID), Read Status Register (RDSR) or Release from Deep Powerdown, and Read Electronic Signature (RES) instruction, the shifted-in instruction sequence is followed by a data-out sequence. Chip Select (S) can be driven High after any bit of the data-out sequence is being shifted out. In the case of a Page Program (PP), Sector Erase (SE), Bulk Erase (BE), Write Status Register (WRSR), Write Enable (WREN), Write Disable (WRDI) or Deep Power-down (DP) instruction, Chip Select (S) must be driven High exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. That is, Chip Select (S) must driven High when the number of clock pulses after Chip Select (S) being driven Low is an exact multiple of eight. All attempts to access the memory array during a Write Status Register cycle, Program cycle or Erase cycle are ignored, and the internal Write Status Register cycle, Program cycle or Erase cycle continues unaffected.
16/50
M25P20 Table 4.
Instruction WREN WRDI RDID
(1)
Instructions Instruction Set
Description Write Enable Write Disable Read Identification Read Status Register Write Status Register Read Data Bytes Read Data Bytes at Higher Speed Page Program Sector Erase Bulk Erase Deep Power-down Release from Deep Powerdown, and Read Electronic Signature Release from Deep Powerdown One-byte Instruction Address Dummy Code Bytes Bytes 0000 0110 0000 0100 1001 1111 0000 0101 0000 0001 0000 0011 0000 1011 0000 0010 1101 1000 1100 0111 1011 1001 06h 04h 9Fh 05h 01h 03h 0Bh 02h D8h C7h B9h 0 0 0 0 0 3 3 3 3 0 0 0 1010 1011 ABh 0 0 0 0 0 0 0 0 0 1 0 0 0 0 3 Data Bytes 0 0 1 to 3 1 to 1 1 to 1 to 1 to 256 0 0 0 1 to
RDSR WRSR READ FAST_READ PP SE BE DP
RES
1. The Read Identification (RDID) instruction is available only in products with Process Technology code X (see Application Note AN1995).
6.1
Write Enable (WREN)
The Write Enable (WREN) instruction (Figure 7) sets the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Bulk Erase (BE) and Write Status Register (WRSR) instruction. The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the instruction code, and then driving Chip Select (S) High. Figure 7. Write Enable (WREN) Instruction Sequence
S 0 C Instruction D High Impedance Q
AI02281E
1
2
3
4
5
6
7
17/50
Instructions
M25P20
6.2
Write Disable (WRDI)
The Write Disable (WRDI) instruction (Figure 8) resets the Write Enable Latch (WEL) bit. The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the instruction code, and then driving Chip Select (S) High. The Write Enable Latch (WEL) bit is reset under the following conditions:

Power-up Write Disable (WRDI) instruction completion Write Status Register (WRSR) instruction completion Page Program (PP) instruction completion Sector Erase (SE) instruction completion Bulk Erase (BE) instruction completion Write Disable (WRDI) Instruction Sequence
S 0 C Instruction D High Impedance Q
AI03750D
Figure 8.
1
2
3
4
5
6
7
18/50
M25P20
Instructions
6.3
Read Identification (RDID)
The Read Identification (RDID) instruction is available in products with Process Technology code X only. The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be read, followed by two bytes of device identification. The manufacturer identification is assigned by JEDEC, and has the value 20h for Numonyx. The device identification is assigned by the device manufacturer, and indicates the memory type in the first byte (20h), and the memory capacity of the device in the second byte (12h). Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) instruction should not be issued while the device is in Deep Power-down mode. The device is first selected by driving Chip Select (S) Low. Then, the 8-bit instruction code for the instruction is shifted in. This is followed by the 24-bit device identification, stored in the memory, being shifted out on Serial Data Output (Q), each bit being shifted out during the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 9. The Read Identification (RDID) instruction is terminated by driving Chip Select (S) High at any time during data output. When Chip Select (S) is driven High, the device is put in the Stand-by Power mode. Once in the Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. Table 5. Read Identification (RDID) Data-Out Sequence
Device Identification Manufacturer Identification Memory Type 20h 20h Memory Capacity 12h
Figure 9.
Read Identification (RDID) Instruction Sequence and Data-Out Sequence
S 0 C Instruction D Manufacturer Identification High Impedance Q MSB 15 14 13 MSB
AI06809b
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18
28 29 30 31
Device Identification 3 2 1 0
19/50
Instructions
M25P20
6.4
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register continuously, as shown in Figure 10. Table 6.
b7 SRWD 0 0 0 BP1 BP0 WEL
Status Register Format
b0 WIP
Status Register Write Protect Block Protect Bits Write Enable Latch Bit Write In Progress Bit
The status and control bits of the Status Register are as follows:
6.4.1
WIP bit
The Write In Progress (WIP) bit indicates whether the memory is busy with a Write Status Register, Program or Erase cycle. When set to 1, such a cycle is in progress, when reset to 0 no such cycle is in progress.
6.4.2
WEL bit
The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status Register, Program or Erase instruction is accepted.
6.4.3
BP1, BP0 bits
The Block Protect (BP1, BP0) bits are non-volatile. They define the size of the area to be software protected against Program and Erase instructions. These bits are written with the Write Status Register (WRSR) instruction. When one or both of the Block Protect (BP1, BP0) bits is set to 1, the relevant memory area (as defined in Table 2) becomes protected against Page Program (PP) and Sector Erase (SE) instructions. The Block Protect (BP1, BP0) bits can be written provided that the Hardware Protected mode has not been set. The Bulk Erase (BE) instruction is executed if, and only if, both Block Protect (BP1, BP0) bits are 0.
6.4.4
SRWD bit
The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect (W) signal allow the device to be put in the Hardware Protected mode (when the Status Register Write Disable (SRWD) bit is set to 1, and Write Protect (W) is driven Low). In this mode, the non-volatile bits of the Status Register (SRWD, BP1, BP0) become read-only bits and the Write Status Register (WRSR) instruction is no longer accepted for execution.
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M25P20
Instructions Figure 10. Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence
S 0 C Instruction D Status Register Out High Impedance Q 7 MSB 6 5 4 3 2 1 0 7 MSB
AI02031E
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
Status Register Out 6 5 4 3 2 1 0 7
21/50
Instructions
M25P20
6.5
Write Status Register (WRSR)
The Write Status Register (WRSR) instruction allows new values to be written to the Status Register. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded and executed, the device sets the Write Enable Latch (WEL). The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) Low, followed by the instruction code and the data byte on Serial Data Input (D). The instruction sequence is shown in Figure 11. The Write Status Register (WRSR) instruction has no effect on b6, b5, b4, b1 and b0 of the Status Register. b6, b5 and b4 are always read as 0. Chip Select (S) must be driven High after the eighth bit of the data byte has been latched in. If not, the Write Status Register (WRSR) instruction is not executed. As soon as Chip Select (S) is driven High, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) is reset. The Write Status Register (WRSR) instruction allows the user to change the values of the Block Protect (BP1, BP0) bits, to define the size of the area that is to be treated as readonly, as defined in Table 2. The Write Status Register (WRSR) instruction also allows the user to set or reset the Status Register Write Disable (SRWD) bit in accordance with the Write Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect (W) signal allow the device to be put in the Hardware Protected Mode (HPM). The Write Status Register (WRSR) instruction is not executed once the Hardware Protected Mode (HPM) is entered. Figure 11. Write Status Register (WRSR) Instruction Sequence
S 0 C Instruction Status Register In 7 High Impedance Q
AI02282D
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
D
6
5
4
3
2
1
0
MSB
22/50
M25P20 Table 7. Protection Modes
Instructions
Memory Content W SRWD Signal Bit 1 0 1 0 0 1 Mode Write Protection of the Status Register Protected Area(1) Unprotected Area(1)
Status Register is Writable (if the WREN instruction Software has set the WEL bit) Protected (SPM) The values in the SRWD, BP1 and BP0 bits can be changed Status Register is Hardware Hardware write protected Protected The values in the SRWD, (HPM) BP1 and BP0 bits cannot be changed
Protected against Page Program, Sector Erase and Bulk Erase
Ready to accept Page Program and Sector Erase instructions
0
1
Protected against Page Program, Sector Erase and Bulk Erase
Ready to accept Page Program and Sector Erase instructions
1. As defined by the values in the Block Protect (BP1, BP0) bits of the Status Register, as shown in Table 2.
The protection features of the device are summarized in Table 7. When the Status Register Write Disable (SRWD) bit of the Status Register is 0 (its initial delivery state), it is possible to write to the Status Register provided that the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction, regardless of the whether Write Protect (W) is driven High or Low. When the Status Register Write Disable (SRWD) bit of the Status Register is set to 1, two cases need to be considered, depending on the state of Write Protect (W):
If Write Protect (W) is driven High, it is possible to write to the Status Register provided that the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction. If Write Protect (W) is driven Low, it is not possible to write to the Status Register even if the Write Enable Latch (WEL) bit has previously been set by a Write Enable (WREN) instruction. (Attempts to write to the Status Register are rejected, and are not accepted for execution). As a consequence, all the data bytes in the memory area that are software protected (SPM) by the Block Protect (BP1, BP0) bits of the Status Register, are also hardware protected against data modification.
Regardless of the order of the two events, the Hardware Protected Mode (HPM) can be entered:

by setting the Status Register Write Disable (SRWD) bit after driving Write Protect (W) Low or by driving Write Protect (W) Low after setting the Status Register Write Disable (SRWD) bit.
The only way to exit the Hardware Protected Mode (HPM) once entered is to pull Write Protect (W) High. If Write Protect (W) is permanently tied High, the Hardware Protected Mode (HPM) can never be activated, and only the Software Protected Mode (SPM), using the Block Protect (BP1, BP0) bits of the Status Register, can be used.
23/50
Instructions
M25P20
6.6
Read Data Bytes (READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that address, is shifted out on Serial Data Output (Q), each bit being shifted out, at a maximum frequency fR, during the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 12. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. The Read Data Bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 12. Read Data Bytes (READ) instruction sequence and data-out sequence
S 0 C Instruction 24-Bit Address 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39
D High Impedance Q
23 22 21 MSB
3
2
1
0 Data Out 1 7 6 5 4 3 2 1 0 7
MSB
AI03748D
1. Address bits A23 to A18 are Don't Care.
24/50
M25P20
Instructions
6.7
Read Data Bytes at Higher Speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that address, is shifted out on Serial Data Output (Q), each bit being shifted out, at a maximum frequency fC, during the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 13. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ) instruction. When the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 13. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence and Data-Out Sequence
S 0 C Instruction 24 BIT ADDRESS 1 2 3 4 5 6 7 8 9 10 28 29 30 31
D High Impedance Q
23 22 21
3
2
1
0
S 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 C Dummy Byte
D
7
6
5
4
3
2
1
0 DATA OUT 1 DATA OUT 2 1 0 7 MSB 6 5 4 3 2 1 0 7 MSB
AI04006
Q
7 MSB
6
5
4
3
2
1. Address bits A23 to A18 are Don't Care.
25/50
Instructions
M25P20
6.8
Page Program (PP)
The Page Program (PP) instruction allows bytes to be programmed in the memory (changing bits from 1 to 0). Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL). The Page Program (PP) instruction is entered by driving Chip Select (S) Low, followed by the instruction code, three address bytes and at least one data byte on Serial Data Input (D). If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (A7-A0) are all zero). Chip Select (S) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 14. If more than 256 bytes are sent to the device, previously latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256 Data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. For optimized timings, it is recommended to use the Page Program (PP) instruction to program all consecutive targeted Bytes in a single sequence versus using several Page Program (PP) sequences with each containing only a few Bytes (see Instruction Times (Device Grade 6) and Table 16: Instruction Times (Device Grade 3)). Chip Select (S) must be driven High after the eighth bit of the last data byte has been latched in, otherwise the Page Program (PP) instruction is not executed. As soon as Chip Select (S) is driven High, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Page Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Page Program (PP) instruction applied to a page which is protected by the Block Protect (BP1, BP0) bits (see Table 3 and Table 2) is not executed.
26/50
M25P20 Figure 14. Page Program (PP) Instruction Sequence
S 0 C Instruction 24-Bit Address Data Byte 1 1 2 3 4 5 6 7 8 9 10
Instructions
28 29 30 31 32 33 34 35 36 37 38 39
D
23 22 21 MSB
3
2
1
0
7
6
5
4
3
2
1
0
MSB
S
2072 2073 2074 2075 2076 2077 2078
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 C Data Byte 2 Data Byte 3
Data Byte 256
D
7
6
5
4
3
2
1
0
7 MSB
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
MSB
MSB
AI04082B
1. Address bits A23 to A18 are Don't Care.
2079
27/50
Instructions
M25P20
6.9
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL). The Sector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the instruction code, and three address bytes on Serial Data Input (D). Any address inside the Sector (see Table 3) is a valid address for the Sector Erase (SE) instruction. Chip Select (S) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 15. Chip Select (S) must be driven High after the eighth bit of the last address byte has been latched in, otherwise the Sector Erase (SE) instruction is not executed. As soon as Chip Select (S) is driven High, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. A Sector Erase (SE) instruction applied to a page which is protected by the Block Protect (BP1, BP0) bits (see Table 3 and Table 2) is not executed. Figure 15. Sector Erase (SE) Instruction Sequence
S 0 C Instruction 24 Bit Address 1 2 3 4 5 6 7 8 9 29 30 31
D
23 22 MSB
2
1
0
AI03751D
1. Address bits A23 to A18 are Don't Care.
28/50
M25P20
Instructions
6.10
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL). The Bulk Erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 16. Chip Select (S) must be driven High after the eighth bit of the instruction code has been latched in, otherwise the Bulk Erase instruction is not executed. As soon as Chip Select (S) is driven High, the self-timed Bulk Erase cycle (whose duration is tBE) is initiated. While the Bulk Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Bulk Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Bulk Erase (BE) instruction is executed only if both Block Protect (BP1, BP0) bits are 0. The Bulk Erase (BE) instruction is ignored if one, or more, sectors are protected. Figure 16. Bulk Erase (BE) Instruction Sequence
S 0 C Instruction D 1 2 3 4 5 6 7
AI03752D
29/50
Instructions
M25P20
6.11
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction is the only way to put the device in the lowest consumption mode (the Deep Power-down mode). It can also be used as an extra software protection mechanism, while the device is not in active use, since in this mode, the device ignores all Write, Program and Erase instructions. Driving Chip Select (S) High deselects the device, and puts the device in the Standby mode (if there is no internal cycle currently in progress). But this mode is not the Deep Powerdown mode. The Deep Power-down mode can only be entered by executing the Deep Power-down (DP) instruction, subsequently reducing the standby current (from ICC1 to ICC2, as specified in Table 13). Once the device has entered the Deep Power-down mode, all instructions are ignored except the Release from Deep Power-down and Read Electronic Signature (RES) instruction. This releases the device from this mode. The Release from Deep Power-down and Read Electronic Signature (RES) instruction and the Read Identification (RDID) instruction also allow the Electronic Signature of the device to be output on Serial Data Output (Q). The Deep Power-down mode automatically stops at Power-down, and the device always Powers-up in the Standby mode. The Deep Power-down (DP) instruction is entered by driving Chip Select (S) Low, followed by the instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 17. Chip Select (S) must be driven High after the eighth bit of the instruction code has been latched in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as Chip Select (S) is driven High, it requires a delay of tDP before the supply current is reduced to ICC2 and the Deep Power-down mode is entered. Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 17. Deep Power-down (DP) Instruction Sequence
S 0 C Instruction D 1 2 3 4 5 6 7 tDP
Stand-by Mode
Deep Power-down Mode
AI03753D
30/50
M25P20
Instructions
6.12
Release from Deep Power-down and Read Electronic Signature (RES)
Once the device has entered the Deep Power-down mode, all instructions are ignored except the Release from Deep Power-down and Read Electronic Signature (RES) instruction. Executing this instruction takes the device out of the Deep Power-down mode. The instruction can also be used to read, on Serial Data Output (Q), the 8-bit Electronic Signature, whose value for the M25P20 is 11h. Except while an Erase, Program or Write Status Register cycle is in progress, the Release from Deep Power-down and Read Electronic Signature (RES) instruction always provides access to the 8-bit Electronic Signature of the device, and can be applied even if the Deep Power-down mode has not been entered. Any Release from Deep Power-down and Read Electronic Signature (RES) instruction while an Erase, Program or Write Status Register cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. The device is first selected by driving Chip Select (S) Low. The instruction code is followed by 3 dummy bytes, each bit being latched-in on Serial Data Input (D) during the rising edge of Serial Clock (C). Then, the 8-bit Electronic Signature, stored in the memory, is shifted out on Serial Data Output (Q), each bit being shifted out during the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 18. The Release from Deep Power-down and Read Electronic Signature (RES) instruction is terminated by driving Chip Select (S) High after the Electronic Signature has been read at least once. Sending additional clock cycles on Serial Clock (C), while Chip Select (S) is driven Low, cause the Electronic Signature to be output repeatedly. When Chip Select (S) is driven High, the device is put in the Standby Power mode. If the device was not previously in the Deep Power-down mode, the transition to the Standby Power mode is immediate. If the device was previously in the Deep Power-down mode, though, the transition to the Standby Power mode is delayed by tRES2, and Chip Select (S) must remain High for at least tRES2(max), as specified in Table 18. Once in the Standby Power mode, the device waits to be selected, so that it can receive, decode and execute instructions.
31/50
Instructions
M25P20
Figure 18. Release from Deep Power-down and Read Electronic Signature (RES) Instruction Sequence and Data-Out Sequence
S 0 C Instruction 3 Dummy Bytes tRES2 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38
D High Impedance Q
23 22 21 MSB
3
2
1
0 Electronic Signature Out 7 MSB Deep Power-down Mode Stand-by Mode
AI04047C
6
5
4
3
2
1
0
1. The value of the 8-bit Electronic Signature, for the M25P20, is 11h.
Figure 19. Release from Deep Power-down (RES) Instruction Sequence
S 0 C Instruction D 1 2 3 4 5 6 7 tRES1
High Impedance Q Deep Power-down Mode Stand-by Mode
AI04078B
Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device, but before the whole of the 8-bit Electronic Signature has been transmitted for the first time (as shown in Figure 19), still ensures that the device is put into Standby Power mode. If the device was not previously in the Deep Power-down mode, the transition to the Standby Power mode is immediate. If the device was previously in the Deep Power-down mode, though, the transition to the Standby Power mode is delayed by tRES1, and Chip Select (S) must remain High for at least tRES1(max), as specified in Table 18. Once in the Standby Power mode, the device waits to be selected, so that it can receive, decode and execute instructions.
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M25P20
Power-up and Power-down
7
Power-up and Power-down
At Power-up and Power-down, the device must not be selected (that is Chip Select (S) must follow the voltage applied on VCC) until VCC reaches the correct value:

VCC(min) at Power-up, and then for a further delay of tVSL VSS at Power-down
Usually a simple pull-up resistor on Chip Select (S) can be used to ensure safe and proper Power-up and Power-down. To avoid data corruption and inadvertent write operations during power up, a Power On Reset (POR) circuit is included. The logic inside the device is held reset while VCC is less than the Power On Reset (POR) threshold voltage, VWI - all operations are disabled, and the device does not respond to any instruction. Moreover, the device ignores all Write Enable (WREN), Page Program (PP), Sector Erase (SE), Bulk Erase (BE) and Write Status Register (WRSR) instructions until a time delay of tPUW has elapsed after the moment that VCC rises above the VWI threshold. However, the correct operation of the device is not guaranteed if, by this time, VCC is still below VCC(min). No Write Status Register, Program or Erase instructions should be sent until the later of:

tPUW after VCC passed the VWI threshold tVSL after VCC passed the VCC(min) level
These values are specified in Table 8. If the delay, tVSL, has elapsed, after VCC has risen above VCC(min), the device can be selected for READ instructions even if the tPUW delay is not yet fully elapsed. At Power-up, the device is in the following state:

The device is in the Standby mode (not the Deep Power-down mode). The Write Enable Latch (WEL) bit is reset.
Normal precautions must be taken for supply rail decoupling, to stabilize the VCC supply. Each device in a system should have the VCC rail decoupled by a suitable capacitor close to the package pins. (Generally, this capacitor is of the order of 0.1F). At Power-down, when VCC drops from the operating voltage, to below the Power On Reset (POR) threshold voltage, VWI, all operations are disabled and the device does not respond to any instruction. (The designer needs to be aware that if a Power-down occurs while a Write, Program or Erase cycle is in progress, some data corruption can result.)
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Power-up and Power-down Figure 20. Power-up Timing
VCC VCC(max) Program, Erase and Write Commands are Rejected by the Device Chip Selection Not Allowed VCC(min) Reset State of the Device VWI tPUW tVSL Read Access allowed
M25P20
Device fully accessible
time
AI04009C
Table 8.
Symbol tVSL(1) tPUW
(1)
Power-Up Timing and VWI Threshold
Parameter VCC(min) to S low Time delay to Write instruction Write Inhibit Voltage (Device grade 6) Write Inhibit Voltage (Device grade 3) Min. 10 1 1 1 10 2 2.2 Max. Unit s ms V V
VWI(1)
1. These parameters are characterized only.
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M25P20
Initial delivery state
8
Initial delivery state
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains 00h (all Status Register bits are 0).
9
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the Numonyx SURE Program and other relevant quality documents. Table 9.
Symbol TSTG VIO VCC VESD Storage Temperature Input and Output Voltage (with respect to Ground) Supply Voltage Electrostatic Discharge Voltage (Human Body model)
(1)
Absolute Maximum Ratings
Parameter Min. -65 -0.6 -0.6 -2000 Max. 150 4.0 4.0 2000 Unit C V V V
1. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 , R2=500 ).
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DC and AC parameters
M25P20
10
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC Characteristic tables that follow are derived from tests performed under the Measurement Conditions summarized in the relevant tables. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. Table 10.
Symbol VCC TA Supply Voltage Ambient Operating Temperature (Device Grade 6) Ambient Operating Temperature (Device Grade 3)
Operating Conditions
Parameter Min. 2.7 -40 -40 Max. 3.6 85 C 125 Unit V
Table 11.
Data Retention and Endurance
Condition Device Grade 6 Device Grade 3 at 55C Min. Max. 100,000 10,000 20 Unit cycles per sector years
Parameter Erase/Program Cycles Data Retention
Table 12.
Symbol COUT CIN
Capacitance
Parameter Output Capacitance (Q) Input Capacitance (other pins) Test Condition VOUT = 0V VIN = 0V Min. Max. 8 6 Unit pF pF
1. Sampled only, not 100% tested, at TA=25C and a frequency of 20MHz.
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M25P20 Table 13.
Symbol ILI ILO ICC1 ICC2
DC and AC parameters DC Characteristics (Device Grade 6)
Parameter Input Leakage Current Output Leakage Current Standby Current Deep Power-down Current S = VCC, VIN = VSS or VCC S = VCC, VIN = VSS or VCC C = 0.1VCC / 0.9.VCC at 40MHz and 50MHz, Q = open ICC3 Operating Current (READ) C = 0.1VCC / 0.9.VCC at 20MHz, Q = open Operating Current (PP) Operating Current (WRSR) Operating Current (SE) Operating Current (BE) Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage IOL = 1.6 mA IOH = -100 A VCC-0.2 S = VCC S = VCC S = VCC S = VCC - 0.5 0.7VCC 4 15 15 15 15 0.3VCC VCC+0.4 0.4 mA mA mA mA mA V V V V Test Condition (in addition to those in Table 10) Min. Max. 2 2 50 5 8 Unit A A A A mA
ICC4 ICC5 ICC6 ICC7 VIL VIH VOL VOH
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DC and AC parameters Table 14.
Symbol ILI ILO ICC1 ICC2
M25P20 DC Characteristics (Device Grade 3)
Parameter Test Condition (in addition to those in Table 10) Min.(1) Max.(1) 2 2 S = VCC, VIN = VSS or VCC S = VCC, VIN = VSS or VCC C = 0.1VCC / 0.9.VCC at 25MHz, Q = open 100 50 8 4 15 15 15 15 - 0.5 0.3VCC Unit A A A A mA mA mA mA mA mA V V V V
Input Leakage Current Output Leakage Current Standby Current Deep Power-down Current
ICC3
Operating Current (READ) C = 0.1VCC / 0.9.VCC at 20MHz, Q = open Operating Current (PP) Operating Current (WRSR) Operating Current (SE) Operating Current (BE) Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage IOL = 1.6 mA IOH = -100 A VCC- 0.2 S = VCC S = VCC S = VCC S = VCC
ICC4 ICC5 ICC6 ICC7 VIL VIH VOL VOH
0.7VCC VCC+0.4 0.4
2. This is preliminary data
Table 15.
Instruction Times (Device Grade 6)
Test conditions specified in Table 10 and Table 17
Symbol tW tPP(1) tSE tBE
Alt.
Parameter Write Status Register Cycle Time Page Program Cycle Time (256 Bytes) Page Program Cycle Time (n Bytes) Sector Erase Cycle Time Bulk Erase Cycle Time
Min.
Typ. 5 1.4 0.4+ n*1/256 0.8 2.5
Max. 15
Unit ms
5
ms
3 6
s s
1. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1 n 256)
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M25P20 Table 16. Instruction Times (Device Grade 3)
DC and AC parameters
Test conditions specified in Table 10 and Table 17 Symbol tW tPP(3) tSE tBE
1. At 85C 2. Preliminary data. 3. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1 n 256)
Alt.
Parameter Write Status Register Cycle Time Page Program Cycle Time (256 Bytes) Page Program Cycle Time (n Bytes) Sector Erase Cycle Time Bulk Erase Cycle Time
Min.
Typ(1) (2) 8 1.5 0.4+ n*1.1/256 1 2.8
Max(2) 15
Unit ms
5
ms
3 6
s s
Table 17.
Symbol CL
AC Measurement Conditions
Parameter Load Capacitance Input Rise and Fall Times Input Pulse Voltages Input Timing Reference Voltages Output Timing Reference Voltages Min. 30 5 0.2VCC to 0.8VCC 0.3VCC to 0.7VCC VCC / 2 Max. Unit pF ns V V V
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC Measurement I/O Waveform
Input Levels 0.8VCC Input and Output Timing Reference Levels 0.7VCC 0.5VCC 0.3VCC
AI07455
0.2VCC
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DC and AC parameters Table 18. AC Characteristics (25MHz Operation, Device Grade 6 or 3)
Test conditions specified in Table 10 and Table 17 Symbol fC fR tCH(1) tCL(1) tCLCH(2) tCHCL(2) tSLCH tCHSL tDVCH tCHDX tCHSH tSHCH tSHSL tSHQZ
(2)
M25P20
Alt. fC
Parameter Clock Frequency for the following instructions: FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI, RDSR, WRSR Clock Frequency for READ instructions
Min. D.C. D.C. 18 18
Typ.
Max. 25 20
Unit MHz MHz ns ns V/ns V/ns ns ns ns ns ns ns ns
tCLH tCLL
Clock High Time Clock Low Time Clock Rise Time Clock Fall
(3)
(peak to peak)
0.1 0.1 10 10 5 5 10 10 100 15 15 0 10 10 10 10 15 20 20 100 3 3 or 30(5) 1.8 or 30(5)
Time(3)
(peak to peak)
tCSS
S Active Setup Time (relative to C) S Not Active Hold Time (relative to C)
tDSU tDH
Data In Setup Time Data In Hold Time S Active Hold Time (relative to C) S Not Active Setup Time (relative to C)
tCSH tDIS tV tHO
S Deselect Time Output Disable Time Clock Low to Output Valid Output Hold Time HOLD Setup Time (relative to C) HOLD Hold Time (relative to C) HOLD Setup Time (relative to C) HOLD Hold Time (relative to C)
ns ns ns ns ns ns ns ns ns ns ns s s s
tCLQV tCLQX tHLCH tCHHH tHHCH tCHHL tHHQX(2) tHLQZ(2) tWHSL(4) tSHWL(4) tDP(2) tRES1(2) tRES2(2)
tLZ tHZ
HOLD to Output Low-Z HOLD to Output High-Z Write Protect Setup Time Write Protect Hold Time S High to Deep Power-down Mode S High to Standby Mode without Electronic Signature Read S High to Standby Mode with Electronic Signature Read
1. tCH + tCL must be greater than or equal to 1/ fC 2. Value guaranteed by characterization, not 100% tested in production. 3. Expressed as a slew-rate. 4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1. 5. It is 30s in devices produced with the "X" process technology (grade 3 devices are only produced using the "X" process technology). Details of how to find the process letter on the device marking are given in the Application note AN1995.
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M25P20 Table 19.
DC and AC parameters AC Characteristics (40MHz Operation, Device Grade 6)
40MHz available for products marked since week 20 of 2004, only(1) Test conditions specified in Table 10 and Table 17 Symbol fC fR tCH
(2)
Alt. fC
Parameter Clock Frequency for the following instructions: FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI, RDSR, WRSR Clock Frequency for READ instructions
Min. D.C. D.C. 11 11
Typ.
Max. 40 20
Unit MHz MHz ns ns V/ns V/ns ns ns ns ns ns ns ns
tCLH tCLL
Clock High Time Clock Low Time Clock Rise Time Clock Fall
(4)
tCL(2) tCLCH(3) tCHCL(3) tSLCH tCHSL tDVCH tCHDX tCHSH tSHCH tSHSL tSHQZ(3) tCLQV tCLQX tHLCH tCHHH tHHCH tCHHL tHHQX(3) tHLQZ(3) tWHSL(5) tSHWL(5) tDP(3) tRES1(3) tRES2(3)
(peak to peak)
0.1 0.1 5 5 2 5 5 5 100 9 9 0 5 5 5 5 9 9 20 100 3 3 or 30(6) 1.8 or 30(6)
Time(4)
(peak to peak)
tCSS tDSU tDH
S Active Setup Time (relative to C) S Not Active Hold Time (relative to C) Data In Setup Time Data In Hold Time S Active Hold Time (relative to C) S Not Active Setup Time (relative to C)
tCSH tDIS tV tHO
S Deselect Time Output Disable Time Clock Low to Output Valid Output Hold Time HOLD Setup Time (relative to C) HOLD Hold Time (relative to C) HOLD Setup Time (relative to C) HOLD Hold Time (relative to C)
ns ns ns ns ns ns ns ns ns ns ns s s s
tLZ tHZ
HOLD to Output Low-Z HOLD to Output High-Z Write Protect Setup Time Write Protect Hold Time S High to Deep Power-down Mode S High to Standby Mode without Electronic Signature Read S High to Standby Mode with Electronic Signature Read
1. Details of how to find the date of marking are given in Application Note, AN1995. 2. tCH + tCL must be greater than or equal to 1/ fC 3. Value guaranteed by characterization, not 100% tested in production. 4. Expressed as a slew-rate. 5. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1. 6. It is 30s in devices produced with the "X" process technology. Details of how to find the process letter on the device marking are given in the Application note AN1995.
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DC and AC parameters Table 20. AC Characteristics (50MHz Operation, Device Grade 6)
50MHz available only in products with Process Technology code X(1) Test conditions specified in Table 10 and Table 17 Symbol fC fR tCH(2) tCL(2) tCLCH tCHCL
(3) (3)
M25P20
Alt. fC
Parameter Clock Frequency for the following instructions: FAST_READ, PP, SE, BE, DP, RES, WREN, RDID, WRDI, RDSR, WRSR Clock Frequency for READ instructions
Min. D.C. D.C. 9 9
Typ.
Max. 50 20
Unit MHz MHz ns ns V/ns V/ns ns ns ns ns ns ns ns
tCLH tCLL
Clock High Time Clock Low Time Clock Rise Clock Fall Time(4) (peak to peak)
0.1 0.1 5 5 2 5 5 5 100 8 8 0 5 5 5 5 8 8 20 100 3 30 30
Time(4)
(peak to peak)
tSLCH tCHSL tDVCH tCHDX tCHSH tSHCH tSHSL tSHQZ(3) tCLQV tCLQX tHLCH tCHHH tHHCH tCHHL tHHQX(3) tHLQZ
(3) (5) (5)
tCSS
S Active Setup Time (relative to C) S Not Active Hold Time (relative to C)
tDSU tDH
Data In Setup Time Data In Hold Time S Active Hold Time (relative to C) S Not Active Setup Time (relative to C)
tCSH tDIS tV tHO
S Deselect Time Output Disable Time Clock Low to Output Valid Output Hold Time HOLD Setup Time (relative to C) HOLD Hold Time (relative to C) HOLD Setup Time (relative to C) HOLD Hold Time (relative to C)
ns ns ns ns ns ns ns ns ns ns ns s s s
tLZ tHZ
HOLD to Output Low-Z HOLD to Output High-Z Write Protect Setup Time Write Protect Hold Time S High to Deep Power-down Mode S High to Standby Power mode without Electronic Signature Read S High to Standby Power mode with Electronic Signature Read
tWHSL tSHWL
tDP(3) tRES1(3) tRES2(3)
1. Details of how to find the date of marking are given in Application Note, AN1995. 2. tCH + tCL must be greater than or equal to 1/ fC 3. Value guaranteed by characterization, not 100% tested in production. 4. Expressed as a slew-rate. 5. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
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M25P20 Figure 22. Serial Input Timing
DC and AC parameters
tSHSL S tCHSL C tDVCH tCHDX D MSB IN tCLCH LSB IN tCHCL tSLCH tCHSH tSHCH
Q
High Impedance
AI01447C
Figure 23. Write Protect Setup and Hold Timing during WRSR when SRWD=1
W tWHSL
tSHWL
S
C
D High Impedance Q
AI07439
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DC and AC parameters Figure 24. Hold Timing
S tHLCH tCHHL C tCHHH tHLQZ Q tHHQX tHHCH
M25P20
D
HOLD
AI02032
Figure 25. Output Timing
S tCH C tCLQV tCLQX Q tQLQH tQHQL D LSB IN
AI01449e ADDR.
tCLQV tCLQX
tCL
tSHQZ
LSB OUT
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M25P20
Package mechanical
11
Package mechanical
Figure 26. SO8 narrow - 8 lead Plastic Small Outline, 150 mils body width, Package Outline
h x 45 A2 b e 0.25 mm GAUGE PLANE k
8
A ccc c
D
E1
1
E A1 L L1
SO-A
1. Drawing is not to scale. 2. The `1' that appears in the top view of the package shows the position of pin 1.
Table 21.
SO8 narrow - 8 lead Plastic Small Outline, 150 mils body width, package mechanical data
millimeters inches Max 1.75 0.10 1.25 0.28 0.17 0.48 0.23 0.10 4.90 6.00 3.90 1.27 4.80 5.80 3.80 - 0.25 0 0.40 1.04 5.00 6.20 4.00 - 0.50 8 1.27 0.041 0.193 0.236 0.154 0.050 0.189 0.228 0.150 - 0.010 0 0.016 0.25 0.004 0.049 0.011 0.007 0.019 0.009 0.004 0.197 0.244 0.157 - 0.020 8 0.050 Typ Min Max 0.069 0.010
Symbol Typ A A1 A2 b c ccc D E E1 e h k L L1 Min
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Package mechanical
M25P20
Figure 27. VFQFPN8 (MLP8) 8-lead Very thin Fine Pitch Quad Flat Package No lead, 6x5mm, Package Outline
D D1
E E1
E2
e
b A2 L D2
A
A1 A3
VFQFPN-01
1. Drawing is not to scale. 2. The circle in the top view of the package indicates the position of pin 1.
Table 22.
VFQFPN8 (MLP8) 8-lead Very thin Fine Pitch Quad Flat Package No lead, 6x5mm, Package Mechanical Data
millimeters inches Max. 1.00 0.00 0.65 0.20 0.40 6.00 5.75 3.40 5.00 4.75 4.00 1.27 0.60 0.50 0.75 12 3.80 4.20 3.20 3.60 0.35 0.48 0.05 0.0256 0.0079 0.0157 0.2362 0.2264 0.1339 0.1969 0.1870 0.1575 0.0500 0.0236 0.0197 0.0295 12 0.1496 0.1654 0.1260 0.1417 0.0138 0.0189 Typ. 0.0335 0.0000 Min. Max. 0.0394 0.0020
Symbol Typ. A A1 A2 A3 b D D1 D2 E E1 E2 e L 0.85 Min.
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M25P20
Part numbering
12
Part numbering
Table 23.
Example: Device Type M25P = Serial Flash Memory for Code Storage Device Function 20 = 2 Mbit (256K x 8) Operating Voltage V = VCC = 2.7 to 3.6V Package MN = SO8 (150 mil width) MP = VFQFPN8 6x5mm (MLP8) Device Grade 6 = Industrial temperature range, -40 to 85 C. Device tested with standard test flow 3(1)= Device tested with High Reliability Certified Flow(2). Automotive temperature range (-40 to 125 C) Option blank = Standard Packing T = Tape and Reel Packing Plating Technology P or G = ECOPACK(R) (RoHS compliant) Process(3) /X = T7Y
1. Device grade 3 available in SO8 ECOPACK(R) (RoHS compliant) package. 2. Numonyx strongly recommends the use of the Automotive Grade devices for use in an automotive environment. The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801. Please ask your nearest Numonyx sales office for a copy. 3. The process letter (/X) is specified in the ordering information of Grade 3 devices only. For Grade 6 devices, the process letter does not appear in the Ordering Information, it only appears on the device package (marking) and on the shipment box. Please contact your nearest Numonyx Sales Office. For more information on how to identify products by the Process Identification Letter, please refer to AN1995: Serial Flash Memory Device Marking.
Ordering Information Scheme
M25P20 - V MN 6 T P /X
For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact your nearest Numonyx Sales Office. The category of Second-Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.
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Revision history
M25P20
13
Revision history
Table 24.
Date 12-Apr-2001 25-May-2001
Document revision history
Revision 1.0 1.1 Document written Serial Paged Flash Memory renamed as Serial Flash Memory Changes to text: Signal Description/Chip Select; Hold Condition/1st para; Protection modes; Release from Power-down and Read Electronic Signature (RES); Power-up Repositioning of several tables and illustrations without changing their contents Power-up timing illustration; SO8W package removed Changes to tables: Abs Max Ratings/VIO; DC Characteristics/VIL FAST_READ instruction added. Document revised with new timings, VWI, ICC3 and clock slew rate. Descriptions of Polling, Hold Condition, Page Programming, Release for Deep Power-down made more precise. Value of tW(max) modified. Clarification of descriptions of entering Standby Power mode from Deep Power-down mode, and of terminating an instruction sequence or dataout sequence. VFQFPN8 package (MLP8) added. Document promoted to full datasheet. Typical Page Program time improved. Write Protect setup and hold times specified, for applications that switch Write Protect to exit the Hardware Protection mode immediately before a WRSR, and to enter the Hardware Protection mode again immediately after. Table of contents, warning about exposed paddle on MLP8, and Pb-free options added. 40MHz AC Characteristics table included as well as 25MHz. ICC3(max), tSE(typ) and tBE(typ) values improved. Change of naming for VDFPN8 package Automotive range added. Soldering temperature information clarified for RoHS compliant devices. Device Grade clarified Device Grade information clarified. Data-retention measurement temperature corrected. Details of how to find the date of marking added. 2 Notes removed from Table 23: Ordering Information Scheme. Small text changes. End timing line of tSHQZ modified in Figure 25: Output Timing. Updated Page Program (PP) instructions in Page Programming, Page Program (PP), Instruction Times (Device Grade 6) and Instruction Times (Device Grade 3). Changes
11-Sep-2001
1.2
16-Jan-2002
1.3
16-May-2002 12-Sep-2002
1.4 1.5
13-Dec-2002
1.6
24-Nov-2003
2.0
26-Apr-2004 05-Aug-2004 21-Dec-2004
3.0 4.0 5.0
01-Aug-2005
6.0
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M25P20 Table 24.
Date
Revision history Document revision history (continued)
Revision Changes 50MHz operation added (see Table 20: AC Characteristics (50MHz Operation, Device Grade 6)). All packages are ECOPACK(R). Blank option removed from under Plating Technology in Table 23: Ordering Information Scheme. MLP package renamed as VFQFPN, silhouette and package mechanical drawing updated (see package silhouette on page 1 and Figure 27: VFQFPN8 (MLP8) 8-lead Very thin Fine Pitch Quad Flat Package No lead, 6x5mm, Package Outline. Note added to Figure 26. and Figure 27 Read Identification (RDID) instruction added. tRES1 and tRES2 modified in Table 20: AC Characteristics (50MHz Operation, Device Grade 6). Titles of Figure 27 and Table 22 corrected. The data contained in Table 11, Table 16 and Table 18 is no longer preliminary data. Figure 3: Bus Master and memory devices on the SPI Bus modified and Note 2 added. 40MHz frequency condition modified for ICC3 in Table 14: DC Characteristics (Device Grade 3). Table 16: Instruction Times (Device Grade 3) shows preliminary data. Device Grade distinction removed, Condition changed for the Data Retention parameter in Table 11: Data Retention and Endurance. VWI parameter for Device Grade 3 added to Table 8: Power-Up Timing and VWI Threshold. SO8 package specifications updated (see Figure 26 and Table 21). /X Process added to Table 23: Ordering Information Scheme. tRES1 and tRES2 parameter timings changed for devices produced with the "X" process technology in Table 18 and Table 19. SO8 Narrow package specifications updated (see Figure 26 and Table 21). Applied Numonyx branding.
01-Dec-2005
7.0
22-Dec-2005
8.0
14-Apr-2006
9
05-Jun-2006
10
10-Dec-2007
11
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M25P20
Please Read Carefully:
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYXTM PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications. Numonyx may make changes to specifications and product descriptions at any time, without notice. Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights. Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Numonyx reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting Numonyx's website at http://www.numonyx.com. Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. Copyright (c) 11/5/7, Numonyx, B.V., All Rights Reserved.
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